IRG4RC10SD International Rectifier, IRG4RC10SD Datasheet - Page 2

• Manufacturer Part Number: IRG4RC10SD
• Description: IGBT STD W/DIODE 600V 8.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 8A
• Current - Collector (ic) (max): 14A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10SD

Details of note
Switching Characteristics @ T
IRG4RC10SD
Electrical Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
d(off)
f
d(on)
d(off)
r
r
f
rr
rr
fe
E
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ts
ies
oes
res
g
gc
rr
(rec)M
(BR)CES
2
GE(th)
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Gate - Emitter Charge (turn-on)
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t

through
Parameter
Parameter
b
„
are on the last page
„
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
ƒ
Min.
Min. Typ. Max. Units
3.65 5.48
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.64
1.58
2.05
1.68
2.42
6.53
0.31
3.28
3.60 10.9
1.46
3.83
-9.5
Typ. Max. Units
815 1200
720 1080
890
890
280
280
235
1.5
1.4
7.5
4.0
2.9
3.7
—
—
—
—
—
15
76
32
70
36
30
28
38
40
70
1000
±100
250
105
1.8
6.0
1.8
1.7
3.6
9.8
2.6
5.2
6.7
—
—
—
—
—
—
22
—
—
42
57
60
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
mJ
nC
nH
nC
V
V
S
V
pF
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
Energy losses include "tail" and
diode reverse recovery.
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
I
T
I
V
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
GE
GE
CC
= 8.0A
= 14.0A
= 8.0A, T
=4.0A
=4.0A, T
= 8.0A, V
= 8.0A, V
= 8.0A
= 5.0A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
Conditions
GE
GE
, I
, I
J
C
C
J
CC
CC
CE
CE
C
C
See Fig.
See Fig.
Conditions
= 150°C
= 250µA
= 1.0mA
See Fig.
See Fig.
= 150°C
G
G
C
= 250µA
= 250µA
= 600V, T
= 600V
= 480V
See Fig. 10,11, 18
= 480V
=8.0A
= 100Ω
= 100Ω
15
14
17
16
See Fig. 8
www.irf.com
See Fig. 7
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
J
GE
R
I
= 150°C
F
= 200V
= 15V
=4.0A