IRG4RC10SD International Rectifier, IRG4RC10SD Datasheet - Page 3

• Manufacturer Part Number: IRG4RC10SD
• Description: IGBT STD W/DIODE 600V 8.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 8A
• Current - Collector (ic) (max): 14A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10SD

www.irf.com
100
2.50
2.00
1.50
1.00
0.50
0.00
10
1
0.5
0.1
Fig. 2 - Typical Output Characteristics
Square wave:
V
1.0
CE
60% of rated
, Collector-to-Emitter Voltage (V)
Ideal diodes
I
voltage
1.5
T = 25 C
J
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
2.0
GE
°
= 15V
T = 150 C
J
2.5
1
(Load Current = I
°
3.0
f, Frequency (KHz)
RMS
100
of fundamental)
Fig. 3 - Typical Transfer Characteristics
10
1
6
T = 150 C
J
V
10
GE
°
, Gate-to-Emitter Voltage (V)
IRG4RC10SD
T = 25 C
J
8
°
PCB Mount, Ta = 55°C
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
J
sink
V
5µs PULSE WIDTH
5µs PULSE WIDTH
= 90°C
CC
10
= 50V
1.4
W
100
3
12