IRG4RC10SD International Rectifier, IRG4RC10SD Datasheet - Page 7

• Manufacturer Part Number: IRG4RC10SD
• Description: IGBT STD W/DIODE 600V 8.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 8A
• Current - Collector (ic) (max): 14A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10SD

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Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
200
160
120
50
45
40
35
30
25
20
80
40
0
100
100
V = 200V
T = 125°C
T = 25°C
V = 200V
T = 125°C
T = 25°C
R
J
J
R
J
J
I = 8.0A
I = 4.0A
F
F
di /dt - (A/µs)
di /dt - (A/µs)
f
f
I = 8.0A
I = 4.0A
F
F
f
/dt
f
/dt
1000
1000
Fig. 15 - Typical Recovery Current vs. di
1000
100
Fig. 17 - Typical di
14
12
10
8
6
4
2
0
100
100
V = 200V
T = 125°C
T = 25°C
V = 200V
T = 125°C
T = 25°C
I = 8.0A
I = 4.0A
F
F
R
J
J
R
J
J
I = 8.0A
I = 4.0A
F
F
IRG4RC10SD
di /dt - (A/µs)
di /dt - (A/µs)
f
f
(rec)M
/dt vs. di
f
/dt,
f
1000
/dt
1000
7
A