MMBF4393LT1G ON Semiconductor, MMBF4393LT1G Datasheet

TRANS JFET SW N-CHAN 30V SOT23

MMBF4393LT1G

Manufacturer Part Number
MMBF4393LT1G
Description
TRANS JFET SW N-CHAN 30V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBF4393LT1G

Current - Drain (idss) @ Vds (vgs=0)
5mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
500mV @ 10nA
Input Capacitance (ciss) @ Vds
14pF @ 15V
Resistance - Rds(on)
100 Ohm
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Drain Current (idss At Vgs=0)
5 mA to 30 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
30 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Input
14 pF
Capacitance, Reverse Recovery
3.5 pF
Channel Type
N-Channel
Current, Gate
50 mA
Current, Gate Reverse
1 nA
On Resistance
100 Ohms
Package Type
SOT-23 (TO-236)
Polarization
N-Channel
Power Dissipation
225 mW
Resistance, Drain To Source On
100 Ohms
Resistance, On
100 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–65 °C
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
30 V
Voltage, Drain To Gate
30 V
Voltage, Drain To Source
30 V
Voltage, Gate To Source, Breakdown
30 V
Voltage, Gate To Source, Cut-off
–3 V
Voltage, Gate To Source, Forward
0.4 V
Breakdown Voltage Vbr
-30V
Zero Gate Voltage Drain Current Idss
5mA To 30mA
Gate-source Cutoff Voltage Vgs(off) Max
-3V
Power Dissipation Pd
225mW
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBF4393LT1GOS
MMBF4393LT1GOS
MMBF4393LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBF4393LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBF4393LT1G
Manufacturer:
ON/???
Quantity:
409 111
MMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
JFET Switching Transistors
N−Channel
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 8
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
Symbol
Symbol
T
R
J
V
V
V
I
P
G(f)
, T
qJA
DS
DG
GS
D
stg
−55 to +150
Value
Max
225
556
1.8
30
30
30
50
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
MARKING & ORDERING INFORMATION
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
GATE
XXX = Specific Device Code
M
G
3
MARKING DIAGRAM
http://onsemi.com
= Date Code*
= Pb−Free Package
1
1
CASE 318
STYLE 10
XXX M G
SOT−23
G
Publication Order Number:
2
1 DRAIN
2 SOURCE
3
MMBF4391LT1/D

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MMBF4393LT1G Summary of contents

Page 1

... MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage Forward Gate Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 25° ...

Page 2

... Vdc −12 Vdc 1.0 MHz ORDERING INFORMATION Device MMBF4391LT1G MMBF4392LT1G MMBF4393LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 ...

Page 3

T = 25°C 500 J MMBF4391 200 MMBF4392 MMBF4393 100 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D ...

Page 4

SET DS(off) INPUT GEN GEN GG INPUT PULSE R > ≤ 0. ≤ 0.5 ns ...

Page 5

T = 25°C channel DS(on GS(off 100 110 120 130 140 150 I ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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