SI1035X-T1-E3 Vishay, SI1035X-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1035X-T1-E3
• Description: MOSFET N/P-CH COMPL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1035X-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 145mA
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 200mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Power Dissipation Pd: 300mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1035X-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
V
GS
0.5
0.4
0.3
0.2
0.1
0.0
25
20
15
10
= 5 V thru 2.5 V
5
0
5
4
3
2
1
0
0.0
0
0
V
I
D
DS
0.2
= 150 mA
V
On-Resistance vs. Drain Current
1
= 10 V
GS
200
V
= 2.5 V
0.4
V
DS
Q
Output Characteristics
GS
g
- Drain-to-Source Voltage (V)
I
= 1.8 V
- Total Gate Charge (nC)
2
D
0.6
- Drain Current (mA)
Gate Charge
400
0.8
3
600
1.0
4
V
GS
1.2
= 4.5 V
800
5
1.4
1.8 V
2 V
1000
1.6
6
A
= 25 °C, unless otherwise noted)
500
400
300
200
100
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
V
f = 1 MHz
- 25
GS
0.5
4
= 0 V
V
V
Transfer Characteristics
DS
GS
T
C
J
oss
0
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
iss
Capacitance
8
25
1.5
V
I
Vishay Siliconix
D
GS
T
25 °C
50
= 150 mA
J
12
= 4.5 V
= - 55 °C
2.0
V
I
D
75
GS
Si1035X
www.vishay.com
= 125 mA
= 1.8 V
16
2.5
125 °C
100
125
3.0
20
5