SI5935DC-T1-E3 Vishay, SI5935DC-T1-E3 Datasheet
SI5935DC-T1-E3
Specifications of SI5935DC-T1-E3
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SI5935DC-T1-E3 Summary of contents
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... Bottom View Ordering Information: Si5935DC-T1-E3 (Lead (Pb)-free) Si5935DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5935DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72220 S10-0936-Rev. C, 19-Apr- 4 °C J 0.8 1.0 1.2 1.4 Si5935DC Vishay Siliconix 800 600 C iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 ...
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... Si5935DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 I Limited DM Limited DS(on D(on) ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72220. Document Number: 72220 S10-0936-Rev. C, 19-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5935DC Vishay Siliconix - www.vishay.com 10 5 ...
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... E 1.825 1.90 1.975 0.072 E 1.55 1.65 1.70 0.061 1 e 0.65 BSC L 0.28 − 0.42 0.011 S 0.55 BSC 5_Nom Package Information Vishay Siliconix Backside View DETAIL X INCHES Nom Max − 0.043 0.012 0.014 0.006 0.008 − 0.0015 0.120 0.122 ...
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... The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further. An example of this method is implemented on the Vishay 1 Siliconix Evaluation Board described in the next section ...
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... AN812 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 30_C/W typical, 40_C/W maximum for the dual device. The “foot” is the drain lead of the device as it connects with the body. This is identical to the dual ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...
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