SI5935DC-T1-E3 Vishay, SI5935DC-T1-E3 Datasheet - Page 3
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SI5935DC-T1-E3
Manufacturer Part Number
SI5935DC-T1-E3
Description
MOSFET DUAL P-CH 20V 3A 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI5935DC-T1-E3.pdf
(10 pages)
Specifications of SI5935DC-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
86 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.1A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
171mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5935DC-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5935DC-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
82 850
Company:
Part Number:
SI5935DC-T1-E3
Manufacturer:
VISHAY
Quantity:
2 296
Part Number:
SI5935DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72220
S10-0936-Rev. C, 19-Apr-10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
1
= 3 A
0.2
On-Resistance vs. Drain Current
= 10 V
3
V
SD
2
Q
0.4
V
g
- Source-to-Drain Voltage (V)
GS
V
I
D
- Total Gate Charge (nC)
GS
T
- Drain Current (A)
Gate Charge
3
J
= 1.8 V
6
= 150 °C
= 2.5 V
0.6
4
0.8
9
5
1.0
V
GS
6
T
J
12
= 4.5 V
= 25 °C
1.2
7
15
1.4
8
800
600
400
200
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
V
I
rss
D
- 25
D
GS
= 3 A
= 0.6 A
= 4.5 V
4
1
V
V
DS
C
T
GS
0
oss
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
8
2
I
D
C
50
= 3 A
iss
Vishay Siliconix
12
3
75
Si5935DC
100
www.vishay.com
16
4
125
150
20
5
3