SI5935DC-T1-E3 Vishay, SI5935DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5935DC-T1-E3
• Description: MOSFET DUAL P-CH 20V 3A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5935DC-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.1A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 171mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5935DC-T1-E3TR

Si5935DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
0.02
- 25
0.05
Duty Cycle = 0.5
0.2
0.1
0
Single Pulse
Threshold Voltage
T
J
25
10
- Temperature (°C)
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
10
100
1
0.1
-2
Limited by R
* V
125
GS
Single Pulse
Limited
T
I
D(on)
C
> minimum V
= 25 °C
150
V
Square Wave Pulse Duration (s)
DS
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
*
-1
BVDSS Limited
GS
at which R
I
DM
Limited
DS(on)
10
50
40
30
20
10
0
1
10
-4
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
DC
P(t) = 1
P(t) = 10
10
-3
100
10
-2
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
10
- T
-1
Time (s)
t
A
1
= P
S10-0936-Rev. C, 19-Apr-10
t
2
DM
Document Number: 72220
1
Z
thJA
100
thJA
t
t
1
2
(t)
= 90
10
°
C/W
100
600
600