SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet
SI5515DC-T1-E3
Specifications of SI5515DC-T1-E3
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SI5515DC-T1-E3 Summary of contents
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... Marking Code Bottom View Ordering Information: Si5515DC-T1-E3 (Lead (Pb)-free) Si5515DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5515DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 72221 S10-0547-Rev. C, 08-Mar-10 1 800 700 600 500 400 300 V = 4.5 V 200 GS 100 Si5515DC Vishay Siliconix ° ° 0.0 0.4 0.8 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage DS Capacitance 1 ...
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... Si5515DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.2 0 250 µA D 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1 ...
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... V - Drain-to-Source Voltage (V) DS Output Characteristics Document Number: 72221 S10-0547-Rev. C, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Si5515DC Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( thJA 4 ...
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... Si5515DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0. 0. 0.10 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www.vishay.com ...
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... Limited °C A 0.1 Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si5515DC Vishay Siliconix Time (s) Single Pulse Power P(t) = 0.0001 P(t) = 0.001 P(t) = 0.01 P(t) = 0 ...
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... Si5515DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...