SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5515DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5515DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5515DC-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72221
S10-0547-Rev. C, 08-Mar-10
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
5
4
3
2
1
0
8
4
0
0
0
0
V
I
D
DS
V
= 4.4 A
GS
On-Resistance vs. Drain Current
= 10 V
1
4
1
= 1.8 V
V
V
GS
DS
Output Characteristics
Q
= 5 V thru 2 V
- Drain-to-Source Voltage (V)
g
I
2
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
8
2
3
12
3
4
1.5 V
1 V
V
V
GS
GS
16
4
= 4.5 V
= 2.5 V
5
20
6
5
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 4.4 A
0.4
= 4.5 V
4
V
GS
Transfer Characteristics
0
T
C
V
J
DS
oss
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage
25
0.8
Capacitance
8
C
50
iss
Vishay Siliconix
1.2
12
75
25 °C
T
Si5515DC
C
= - 55 °C
100
www.vishay.com
1.6
16
125
125 °C
150
2.0
20
3