SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI5515DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5515DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5515DC-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72221
S10-0547-Rev. C, 08-Mar-10
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
-4
0.1
0.2
0.02
- 25
0.05
Duty Cycle = 0.5
Single Pulse
0
Threshold Voltage
T
J
10
25
- Temperature (°C)
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
10
0.01
100
100
0.1
-2
10
1
0.1
Limited by R
125
* V
GS
Single Pulse
Limited
T
I
> minimum V
D(on)
150
A
Square Wave Pulse Duration (s)
V
= 25 °C
DS
DS(on)
Safe Operating Area
10
- Drain-to-Source Voltage (V)
-1
1
*
GS
BVDSS Limited
at which R
I
DM
Limited
1
DS(on)
10
50
40
30
20
10
0
10
-4
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
-3
100
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Single Pulse Power
-2
DM
JM
- T
10
A
t
1
Time (s)
= P
-1
t
2
DM
Vishay Siliconix
Z
thJA
1
thJA
100
t
t
1
2
(t)
Si5515DC
= 90 °C/W
10
www.vishay.com
100
600
600
7