SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 3
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4618DY-T1-E3
Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4618DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
I
I
= 4 A, dI/dt = 100 A/µs, T
I
I
= 4 A, dI/dt = 100 A/µs, T
D
D
D
D
≅ 5 A, V
≅ 5 A, V
≅ 5 A, V
≅ 5 A, V
V
V
V
V
DD
DD
DD
DD
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
GEN
GEN
T
Channel-1
GEN
Channel-2
GEN
Channel-1
Channel-2
Channel-1
Channel-2
Test Conditions
C
I
I
S
S
= 25 °C
= 2 A
= 1 A
= 4.5 V, R
= 4.5 V, R
= 10 V, R
= 10 V, R
L
L
L
L
= 3 Ω
= 3 Ω
= 3 Ω
= 3 Ω
g
g
g
g
J
J
= 1 Ω
= 1 Ω
= 1 Ω
= 1 Ω
= 25 °C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Vishay Siliconix
Typ.
0.77
0.37
22
24
20
26
24
24
87
97
30
35
34
45
22
26
15
15
13
13
13
8
9
8
8
9
Si4618DY
a
www.vishay.com
Max.
0.43
130
145
1.8
3.8
1.1
15
16
33
36
30
39
15
15
36
36
45
53
51
68
35
35
33
39
23
23
Unit
nC
ns
ns
ns
A
V
3