SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4618DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4618DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.7A, 11.4A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 15V
• Power - Max: 1.38W, 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.5V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.017 Ohms, 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 6.7 A, 11.4 A
• Power Dissipation: 1.38 W, 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4618DY-T1-E3TR

Si4618DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.025
0.022
0.016
0.013
0.010
0.019
10
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
I
D
= 8 A
On-Resistance vs. Drain Current
0.6
10
6
V
DS
Output Characteristics
Q
V
DS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
V
I
= 10 V
GS
D
Gate Charge
V
1.2
- Drain Current (A)
12
20
GS
= 4.5 V
= 10 V thru 4 V
V
DS
1.8
18
30
= 30 V
V
GS
V
DS
2.4
24
40
= 10 V
3 V
= 20 V
3.0
30
50
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
I
D
- 25
= 8 A
T
C
T
6
1
V
C
= 125 °C
V
DS
Transfer Characteristics
T
= 25 °C
GS
0
J
C
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
iss
25
Capacitance
12
2
S09-2109-Rev. B, 12-Oct-09
50
Document Number: 74450
T
18
C
3
75
= - 55 °C
V
100
GS
24
V
4
= 10 V
GS
125
= 4.5 V
150
30
5