SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 5
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4618DY-T1-E3
Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4618DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
150 °C
0.6
50
I
75
0.01
D
100
0.1
25 °C
10
0.8
= 250 µA
1
0
1 .
100
I
* V
D
Safe Operating Area, Junction-to-Ambient
Limited by R
= 5 mA
GS
1.0
125
V
minimum V
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
150
Single Pulse
1
T
A
*
GS
= 25 °C
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
100
is specified
80
60
40
20
0
0
0 .
0
1 ms
10 ms
1 s
10 s
100 ms
DC
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
I
D
1
= 8 A
1
0
0
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
125 °C
0.1
25 °C
Vishay Siliconix
5
6
Si4618DY
7
www.vishay.com
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