EM6M1T2R Rohm Semiconductor

EM6M1T2R

Manufacturer Part Number

EM6M1T2R

Description

MOSFET N/P-CH 30V .1A EMT6

Manufacturer

Rohm Semiconductor

Specifications of EM6M1T2R

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 Ohm @ 10mA, 4V

Drain To Source Voltage (vdss)

30V, 20V

Current - Continuous Drain (id) @ 25° C

100mA, 200mA

Gate Charge (qg) @ Vgs

0.9nC @ 4.5V

Input Capacitance (ciss) @ Vds

13pF @ 5V

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

EMT6

Configuration

Dual

Transistor Polarity

N and P-Channel

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

0.1 A

Power Dissipation

0.15 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Vgs(th) (max) @ Id

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

EM6M1T2RTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EM6M1T2R

Manufacturer:

ETRONTECH

Quantity:

977

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