IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 3
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IRF7555TRPBF
Manufacturer Part Number
IRF7555TRPBF
Description
MOSFET P-CH DUAL 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7555TRPBF.pdf
(9 pages)
Specifications of IRF7555TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Channel Type
P
Current, Drain
–4.3 A
Package Type
MICRO-8
Polarization
P-Channel
Power Dissipation
1.2 W
Resistance, Drain To Source On
0.055 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7555TRPBF
IRF7555TRPBFTR
IRF7555TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
100
100
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
1.0
TOP
BOTTOM
-V
-V
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
2.0
, Gate-to-Source Voltage (V)
T = 25 C
1
J
-1.50V
°
3.0
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
10
J
= -15V
4.0
°
°
100
5.0
100
0.1
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
-V
-4.3A
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
T , Junction Temperature ( C)
, Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
IRF7555PbF
20 40 60 80 100 120 140 160
-1.50V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-4.5V
100
3