IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 5
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IRF7555TRPBF
Manufacturer Part Number
IRF7555TRPBF
Description
MOSFET P-CH DUAL 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7555TRPBF.pdf
(9 pages)
Specifications of IRF7555TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Channel Type
P
Current, Drain
–4.3 A
Package Type
MICRO-8
Polarization
P-Channel
Power Dissipation
1.2 W
Resistance, Drain To Source On
0.055 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7555TRPBF
IRF7555TRPBFTR
IRF7555TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.0001
Fig 9. Maximum Drain Current Vs.
1
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
125
0.01
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
100
80
60
40
20
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
50
Vs. Drain Current
J
J
IRF7555PbF
75
DM
x Z
1
thJA
P
2
10
DM
100
+ T
TOP
BOTTOM
A
t
1
t
2
125
-1.3A
-2.4A
-3.0A
°
I D
100
5
150