IRF7555TRPBF International Rectifier, IRF7555TRPBF Datasheet - Page 4
![MOSFET P-CH DUAL 20V 4.3A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7555TRPBF
Manufacturer Part Number
IRF7555TRPBF
Description
MOSFET P-CH DUAL 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7555TRPBF.pdf
(9 pages)
Specifications of IRF7555TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Channel Type
P
Current, Drain
–4.3 A
Package Type
MICRO-8
Polarization
P-Channel
Power Dissipation
1.2 W
Resistance, Drain To Source On
0.055 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7555TRPBF
IRF7555TRPBFTR
IRF7555TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7555PbF
4
1600
1200
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T = 150 C
Drain-to-Source Voltage
J
-V
-V
0.4
DS
SD
Forward Voltage
°
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
C iss
C oss
C rss
0.8
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
J
+ C
+ C
1.2
10
f = 1MHz
gd ,
gd
°
C
1.6
ds
SHORTED
V
GS
2.0
= 0 V
100
2.4
100
0.1
15
12
Fig 8. Maximum Safe Operating Area
10
9
6
3
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C °
= 150 C
-4.5A
Gate-to-Source Voltage
-V
OPERATION IN THIS AREA LIMITED
4
DS
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
8
1
BY R
12
V
DS(on)
DS
=-10V
www.irf.com
10
16
10us
100us
1ms
10ms
20
100
24