IRF7307QTRPBF International Rectifier, IRF7307QTRPBF Datasheet

MOSFET N/P-CH DUAL 20V 8SOIC

IRF7307QTRPBF

Manufacturer Part Number
IRF7307QTRPBF
Description
MOSFET N/P-CH DUAL 20V 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7307QTRPBF

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A, 4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
660pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
12V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7307QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7307QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
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Description
These HEXFET
8 package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
®
Power MOSFET's in a Dual SO-

operating
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
8
6
5
7
D1
D1
D2
D2
SO-8
DS(on)
DSS
1

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IRF7307QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET Dual SO- ...

Page 2

J DS(ON) GS(th) fs DSS GSS d(on) r d(off iss oss rss Notes:  ‚ ≤ ≤ ≤ ≤ www.irf.com J Ω  ƒ ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 100 10 20µs PULSE WIDTH 1. 25° 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150°C ...

Page 4

T = 150° 25° 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) SD 6.0 5.0 4.0 3.0 2.0 1.0 0 100 T , Case Temperature C Current Regulator ...

Page 5

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1. -1.5V 20µs PULSE WIDTH T = 25°C J 0.1 0.01 0 Drain-to-Source Voltage (V) DS ...

Page 6

T = 150° 25° 0.1 0.3 0.6 0 Source-to-Drain Voltage (V) SD 5.0 4.0 3.0 2.0 1.0 0 100 T , Case Temperature C Current Regulator Same Type ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration ...

Page 8

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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