STS4DPF20L STMicroelectronics, STS4DPF20L Datasheet
STS4DPF20L
Specifications of STS4DPF20L
STS4DPF20L
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STS4DPF20L Summary of contents
Page 1
... I DS(on) D <0. INTERNAL SCHEMATIC DIAGRAM Parameter = 25°C Single Operation C = 100°C Single Operation C = 25°C Dual Operation C = 25°C Single Operation C Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed STS4DPF20L - 4A SO-8 SO-8 Value Unit ± 2 1 1/8 ...
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... STS4DPF20L THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient T Thermal Operating Junction-ambient j T Storage Temperature stg (*) When Mounted on 0 pad of 2 oz.copper ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ...
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... Load, Figure 24V = (See test circuit, Figure 2) Test Conditions = 4 4 (Resistive Load, Figure 1) Test Conditions di/dt = 100A/µ 150° (See test circuit, Figure 3) Thermal Impedance STS4DPF20L Min. Typ. Max. Unit 12 Min. Typ. Max. Unit 125 Min. Typ. Max. Unit 1 1.6 A 3/8 ...
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... STS4DPF20L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature . . STS4DPF20L 5/8 ...
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... STS4DPF20L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit ...
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... STS4DPF20L inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.050 0.150 0.157 0.050 0.023 0016023 7/8 ...
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... STS4DPF20L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...