STS4DPF20L STMicroelectronics, STS4DPF20L Datasheet - Page 3

MOSFET P-CH DUAL 20V 4A 8-SOIC

STS4DPF20L

Manufacturer Part Number
STS4DPF20L
Description
MOSFET P-CH DUAL 20V 4A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS4DPF20L

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 5V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8042-2
STS4DPF20L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS4DPF20L
Manufacturer:
OPTI
Quantity:
660
Part Number:
STS4DPF20L
Manufacturer:
ST
0
Part Number:
STS4DPF20L
Manufacturer:
ST
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 1)
V
(See test circuit, Figure 2)
V
R
(Resistive Load, Figure 1)
I
I
V
(See test circuit, Figure 3)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 4 A
= 4 A
= 24V I
= 15 V
= 15 V
= 15 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 4A V
Thermal Impedance
di/dt = 100A/µs
V
T
V
GS
V
j
GS
GS
GS
= 150°C
I
I
D
D
= 0
=5V
= 2 A
= 4.5 V
= 2 A
= 4.5 V
Min.
Min.
Min.
Typ.
12.5
Typ.
Typ.
125
1.6
25
35
35
45
36
5
3
STS4DPF20L
Max.
Max.
Max.
1.2
16
16
4
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/8

Related parts for STS4DPF20L