QS6M3TR Rohm Semiconductor, QS6M3TR Datasheet
QS6M3TR
Specifications of QS6M3TR
Available stocks
Related parts for QS6M3TR
QS6M3TR Summary of contents
Page 1
Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). Application Power switching converter. Packaging specifications Package Taping Type Code ...
Page 2
Transistors N-ch Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance ...
Page 3
Transistors P-ch Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance ...
Page 4
Transistors N-ch Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C rss C oss 10 1 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (A) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 =10V V ...
Page 5
Transistors P-ch Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C oss C rss 10 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 = −10V ...
Page 6
Transistors N-ch Measurement circuit D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge Measurement Circuit ...
Page 7
Transistors P-ch Measurement circuit D.U. Fig.3-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.4-1 Gate Charge Measurement Circuit ...
Page 8
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...