SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
5
4
3
2
1
0
0.0
0.0
0.0
V
I
D
DS
V
= 0.29 A
GS
0.5
0.1
On-Resistance vs. Drain Current
= 10 V
= 2.5 V
V
DS
0.2
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
0.2
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
V
1.5
0.3
0.4
GS
= 2.7 V
V
GS
2.0
0.4
= 5 V thru 3.5 V
V
GS
0.6
1.5 V
= 4.5 V
2.5
0.5
2.5 V
3 V
2 V
3.0
0.6
0.8
100
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
V
I
- 25
D
0.5
rss
GS
= 0.29 A
= 4.5 V
4
V
V
1.0
GS
DS
T
0
Transfer Characteristics
J
C
- Junction Temperature (°C)
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.5
25
Capacitance
8
2.0
C
50
25 °C
iss
Vishay Siliconix
T
C
12
2.5
= - 55 °C
75
Si1551DL
100
3.0
www.vishay.com
16
125 °C
125
3.5
150
4.0
20
3