SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

Si1551DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.1
- 0.2
- 0.3
0.2
0.1
0.1
0.0
0.1
2
1
1
- 50
10
0.0
-4
0.02
0.05
0.1
Duty Cycle = 0.5
0.2
- 25
Source-Drain Diode Forward Voltage
0.2
Single Pulse
V
SD
T
0
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
Threshold Voltage
10
0.4
T
-3
J
25
= 150 °C
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.8
10
-2
100
T
J
= 25 °C
1.0
125
Square Wave Pulse Duration (s)
150
1.2
10
-1
1
6
5
4
3
2
1
0
5
4
3
2
1
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
-2
1
V
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
10
- Gate-to-Source Voltage (V)
DM
Single Pulse Power
JM
-1
- T
2
A
t
1
Time (s)
= P
t
2
DM
S10-0935-Rev. D, 19-Apr-10
1
Z
Document Number: 71255
thJA
100
thJA
3
t
t
1
2
(t)
I
= 400 °C/W
D
10
= 0.29 A
4
100
6
0
0
600
5