FW342-TL-E SANYO, FW342-TL-E Datasheet
FW342-TL-E
Specifications of FW342-TL-E
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FW342-TL-E Summary of contents
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... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FW342 Symbol Conditions V DSS V GSS ...
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... Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm 2129 5.0 1.27 0.595 0.43 FW342 Symbol Conditions Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit ...
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... Gate-to-Source Voltage FW342 [P-channel] --10V OUT FW342 S [Nch] 0.6 0.7 0.8 0.9 1.0 IT07380 [Nch] Ta= IT07382 --15V -- OUT PW= FW342 P 6 =10V 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage (on --60 --40 -- Ambient Temperature [Nch] 3.0 3.5 4 ...
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... Drain Current =10V = Total Gate Charge --5.0 --4.0 --3.0 --2.0 --1 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage FW342 [Nch IT07384 [Nch =15V =10V 1000 100 IT07386 [Nch 1.0 7 Operation in this area 5 is limited (on 0.1 7 ...
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... Gate-to-Source Voltage --10V 1 --0.1 --1.0 Drain Current Time -- --15V --10V 100 (on --0.1 --1.0 Drain Current -- --10V -- --5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FW342 [Pch] 140 Ta=25 C 120 100 --12 --14 --16 --60 --40 IT07392 [Pch] -- --1 --0 --0. --0.2 --10 IT07394 [Pch 1000 100 --10 IT07396 [Pch -- --1 ...
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... Allowable Power Dissipation(FET 2 Note on usage : Since the FW342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...