ECH8619-TL-E SANYO, ECH8619-TL-E Datasheet - Page 5

• Manufacturer Part Number: ECH8619-TL-E
• Description: MOSFET N/P-CH 60V 3/2A ECH8
• Manufacturer: SANYO

Specifications of ECH8619-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Gate Charge (qg) @ Vgs: 12.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 869-1156-2

1000
1000
0.01
100
100
1.0
1.0
0.1
10
10
10
10
0.01
0.01
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25 °C
Single pulse
Mounted on a ceramic board (900mm
V DS =30V
I D =3A
2 3
1
2
2
3
5
5 7
Operation in this
area is limited by R DS (on).
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
3
0.1
Total Gate Charge, Qg -- nC
Drain Current, I D -- A
4
0.1
10
2 3
SW Time -- I D
V GS -- Qg
5
5 7
2
A S O
6
Ciss
1.0
3
15
7
5 7
2 3
8
2
✕0.8mm) 1unit
1.0
20
5 7
9
10
10
2
V DD =30V
V GS = 10 V
PW ≤10µs
3
25
2 3
11
f=1MHz
IT08985
IT08986
IT08987
IT08988
5 7
[Nch]
[Nch]
[Nch]
[Nch]
12
5 7
100
10
30
13
ECH8619
--0.01
1000
1000
--1.0
--0.1
100
100
--10
1.0
--10
10
--9
--8
--7
--6
--5
--4
--3
--2
--1
--0.01
--0.1
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25 °C
Single pulse
Mounted on a ceramic board (900mm
V DS = -- 30V
I D = --2 A
1
Operation in this
area is limited by R DS (on).
2
2
2
--5
3
3
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
3
5 7
5 7
Total Gate Charge, Qg -- nC
4
Drain Current, I D -- A
--1.0
--10
SW Time -- I D
--0.1
5
V GS -- Qg
6
2
A S O
2
7
--15
3
3
8
5 7
5 7
9
2
✕0.8mm) 1unit
--10
--20
10
--1.0
11
2
V DD = --30V
V GS = --10V
12
No. A0658-5/6
2
--25
PW ≤10µs
3
f=1MHz
13
3
IT10650
IT10651
IT10652
IT10653
5 7
[Pch]
[Pch]
[Pch]
[Pch]
14
5 7
--100
--30
15