SI3585DV-T1-E3 Vishay, SI3585DV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI3585DV-T1-E3
• Description: MOSFET N/P-CH 20V 2A/1.5A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3585DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.125 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Power Dissipation Pd: 1.15W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3585DV-T1-E3TR

Si3585DV
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
_
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
V
V
DS
I ^ –1 A, V
I
V
D
DS
V
I
D
DS
^ –1 A, V
DS
= –10 V, V
I
^ 1 A, V
I
F
= 10 V, V
V
F
= –16 V, V
V
V
V
V
= 16 V, V
= –1.05 A, di/dt = 100 A/ms
V
V
V
V
DS
I
V
= 1.05 A, di/dt = 100 A/ms
V
V
V
GS
GS
I
S
V
DS
DS
S
DS
DS
DS
V
DD
DS
GS
GS
DD
DS
= –1.05 A, V
DS
= 1.05 A, V
p –5 V, V
= –4.5 V, I
= –2.5 V, I
= V
= 0 V, V
w 5 V, V
= V
= –16 V, V
= –10 V, R
= –5 V, I
= 16 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 5 V, I
N-Channel
N-Channel
P-Channel
N-Channel
GEN
P-Channel
P-Channel
GEN
Test Condition
GS
GS
GS
GS
GS
GS
, I
, I
= –4.5 V, I
= 4.5 V, R
= –4.5 V, R = 6 W
= –4.5 V, R
= 4.5 V, I
GS
= 0 V, T
D
D
= 0 V, T
D
D
GS
GS
= –250 mA
D
D
D
D
GS
GS
= 250 mA
L
GS
= 2.4 A
= –1.8 A
GS
L
= "12 V
= 2.4 A
= –1.8 A
= 1.8 A
= –1.2 A
= 10 W
= 4.5 V
= –4.5 V
= 10 W
"
= 0 V
= 0 V
= 0 V
= 0 V
J
J
D
G
D
W
= 55_C
W
= 55_C
G
= 2.4 A
= –1.8 A
= 6 W
= 6 W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
–0.5
0.6
–5
5
0.100
0.160
0.160
0.280
–0.83
S-03512—Rev. B, 04-Apr-01
Typ
0.80
3.6
2.1
2.7
0.3
0.4
0.4
0.6
10
30
34
14
19
24
30
20
11
Document Number: 71184
5
6
"100
"100
Max
0.125
0.200
0.200
0.340
–1.10
1.10
3.2
4.0
–1
–5
17
17
50
50
25
30
12
36
50
40
1
5
Unit
nA
m
mA
nC
ns
W
W
V
A
S
V