SI1553DL-T1 Vishay, SI1553DL-T1 Datasheet - Page 2

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SI1553DL-T1

Manufacturer Part Number
SI1553DL-T1
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1553DL-T1

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA, 410mA
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
N And P Channel
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
995mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1553DL-T1
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI1553DL-T1-E3
Manufacturer:
CRUSTRL
Quantity:
6
Part Number:
SI1553DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1553DL-T1-E3
Quantity:
70 000
Part Number:
SI1553DL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
www.vishay.com
2-2
Si1553DL
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
V
V
I ^ -0.5 A, V
I
DS
D
I
DS
V
D
V
^ -0.5 A, V
DS
= -10 V, V
DS
^ 0.5 A, V
= 10 V, V
I
I
F
V
V
V
F
V
V
= -16 V, V
V
= 16 V, V
= -0.23 A, di/dt = 100 A/ms
V
V
V
V
V
V
DS
GS
GS
I
V
= 0.23 A, di/dt = 100 A/ms
DS
V
I
S
V
DS
DS
GS
GS
S
DS
DS
DS
DD
DS
DD
DS
= -0.23 A, V
= 0.23 A, V
p -5 V, V
= -4.5 V, I
= -2.5 V, I
= -10 V, I
= V
= 0 V, V
w 5 V, V
= V
= 4.5 V, I
= 2.5 V, I
= -16 V, V
= 10 V, I
= -10 V, R
= 16 V, V
= 10 V, R
N-Channel
N-Channel
P-Channel
N-Channel
P-Channel
P-Channel
Test Condition
GS
GEN
GEN
GS
GS
GS
GS
GS
, I
= -4.5 V, I
, I
= 4.5 V, I
GS
= 0 V, T
= 4.5 V, R
= -4.5 V, R = 6 W
= -4.5 V, R
D
D
= 0 V, T
D
D
GS
GS
D
D
D
D
= -250 mA
GS
GS
= 250 mA
L
GS
= 0.66 A
GS
= -0.41 A
L
= "12 V
= 0.66 A
= 0.40 A
= -0.41 A
= -0.25 A
= 20 W
= 4.5 V
= -4.5 V
= 20 W
"
= 0 V
= 0 V
= 0 V
= 0 V
J
D
J
D
W
= 85_C
= 0.66 A
G
W
= 85_C
= -0.41 A
G
= 6 W
= 6 W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
-0.6
-1.0
0.6
1.0
S-21374—Rev. D, 12-Aug-02
0.320
0.850
0.560
Typ
-0.8
0.06
0.45
0.30
0.25
1.4
1.5
0.8
0.8
0.8
1.2
7.5
8.5
10
16
20
10
10
12
20
25
Document Number: 71078
"100
"100
Max
0.385
0.995
0.630
1.800
-1.2
1.2
1.2
1.8
-1
-5
20
15
30
40
20
17
20
24
40
40
1
5
Unit
nA
m
mA
nC
ns
W
W
V
A
S
V

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