SI1553DL-T1 Vishay, SI1553DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1553DL-T1
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71078
S-21374—Rev. D, 12-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0.0
0.0
V
I
D
DS
= 0.66 A
0.5
= 10 V
On-Resistance vs. Drain Current
0.2
V
DS
0.2
Q
Output Characteristics
V
g
- Drain-to-Source Voltage (V)
V
GS
1.0
I
GS
D
- Total Gate Charge (nC)
= 5 thru 2.5 V
- Drain Current (A)
= 2.5 V
Gate Charge
0.4
1.5
0.4
0.6
2.0
1.5 V
V
0.6
GS
2 V
1 V
0.8
= 4.5 V
2.5
3.0
1.0
0.8
100
1.6
1.4
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
-50
0.0
0
C
On-Resistance vs. Junction Temperature
V
I
D
-25
rss
GS
= 0.66 A
= 4.5 V
0.5
4
V
T
GS
V
0
J
DS
Transfer Characteristics
C
- Junction Temperature (_C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
25_C
Capacitance
1.0
8
T
C
= 125_C
Vishay Siliconix
C
50
iss
12
1.5
75
Si1553DL
N−CHANNEL
-55 _C
100
16
2.0
www.vishay.com
125
150
20
2.5
2-3