SI1553DL-T1 Vishay, SI1553DL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1553DL-T1
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.vishay.com
2-4
Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.1
-0.2
-0.3
-0.4
0.2
0.1
0.1
0.01
1
0.1
-50
0.0
2
1
10
- 4
Source-Drain Diode Forward Voltage
-25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
T
0
J
Single Pulse
= 150_C
T
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
J
- Temperature (_C)
25
10
- 3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
10
100
T
- 2
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
- 1
1
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
10
0
- 3
On-Resistance vs. Gate-to-Source Voltage
10
- 2
1
V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
10
DM
JM
- Gate-to-Source Voltage (V)
Single Pulse Power
- 1
- T
Time (sec)
2
t
1
A
= P
t
2
DM
1
Z
S-21374—Rev. D, 12-Aug-02
thJA
100
thJA
t
t
Document Number: 71078
3
I
1
2
D
(t)
= 0.66 A
=400_C/W
10
N−CHANNEL
4
100
600
600
5