SI3588DV-T1-E3 Vishay, SI3588DV-T1-E3 Datasheet - Page 10
![MOSFET N/P-CH 20V 2.5/.57A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3588DV-T1-E3
Manufacturer Part Number
SI3588DV-T1-E3
Description
MOSFET N/P-CH 20V 2.5/.57A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3588DV-T1-E3.pdf
(8 pages)
2.SI3588DV-T1-E3.pdf
(8 pages)
3.SI3588DV-T1-E3.pdf
(12 pages)
Specifications of SI3588DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.5A, 570mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A @ N Channel or 0.57 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3588DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
AN823
Vishay Siliconix
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
junction-to-foot thermal resistance, Rq
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted.
of the TSOP-6.
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r
www.vishay.com
2
Equivalent Steady State Performance—TSOP-6
DS(on)
Thermal Resistance Rq
with temperature (Figure 4).
thermal
3_C/s (max)
Table 1 shows the thermal performance
140 − 170_C
TABLE 1.
resistance,
jf
FIGURE 3. Solder Reflow Temperature and Time Durations
jf
. This parameter is
Maximum peak temperature at 240_C is allowed.
Rq
jc
,
30_C/W
Pre-Heating Zone
60-120 s (min)
or
the
1X4_C/s (max)
255 − 260_C
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
I
−25
D
Reflow Zone
GS
60 s (max)
= 6.1 A
10 s (max)
217_C
= 4.5 V
T
FIGURE 4. Si3434DV
0
J
− Junction Temperature (_C)
25
50
3-6_C/s (max)
75
Document Number: 71743
100
125
150
27-Feb-04