SI7913DN-T1-E3 Vishay, SI7913DN-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SI7913DN-T1-E3
• Description: MOSFET DUAL P-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7913DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 66mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7913DN-T1-E3TR

AN822
Vishay Siliconix
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
www.vishay.com
4
105
95
85
75
65
55
45
0.00
Figure 5. Spreading Copper - Si7401DN
0 %
0.25
Spreading Copper (sq. in.)
0.50
0.75
1.00
100 %
1.25
1.50
1.75
50 %
2.00
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps r
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Figure 6. Spreading Copper - Junction-to-Ambient Performance
130
120
110
100
90
80
70
60
50
0.00
Spreading Copper (sq. in.)
0.25
DS(ON)
0.50
50 %
low, and permits the device to
0.75
1.00
100 %
1.25
Document Number 71681
1.50
1.75
03-Mar-06
0 %
2.00