SI7913DN-T1-E3 Vishay, SI7913DN-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI7913DN-T1-E3
• Description: MOSFET DUAL P-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7913DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 66mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7913DN-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK
www.vishay.com
1
Return to Index
Return to Index
(0.660)
(0.405)
0.026
(0.660)
0.016
0.026
(0.405)
0.016
(0.990)
(0.635)
0.039
0.025
(0.990)
0.039
Recommended Minimum PADs for PowerPAK 1212-8 Dual
(0.635)
0.025
Recommended Minimum Pads
Dimensions in Inches/(mm)
Dimensions in Inches/(mm)
(3.860)
®
0.152
(0.990)
(0.990)
1212-8 Dual
0.039
0.039
(3.860)
0.152
(1.725)
0.068
(1.725)
0.068
(0.760)
0.030
(0.760)
0.030
(0.225)
0.010
(2.390)
0.094
(0.255)
0.010
Document Number: 72598
Revision: 14-Apr-08