SI7913DN-T1-E3 Vishay, SI7913DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7913DN-T1-E3
• Description: MOSFET DUAL P-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7913DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 66mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7913DN-T1-E3TR

Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
I
T
D
J
= 250
25
- Temperature (°C)
10
-3
Single Pulse
µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
0.1
100
10
Limited by R
-2
Safe Operating Area, Junction-to-Ambient
* V
Limited
I
D(on)
125
GS
Single Pulse
T
A
> minimum V
V
= 25 °C
DS
150
DS(on) *
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
1
10
-1
BVDSS Limited
GS
at which R
I
DM
10
DS(on)
Limited
50
40
30
20
10
0.001
0
1
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
Time (s)
- T
A
t
1
= P
S-83050-Rev. C, 29-Dec-08
1
t
Document Number: 72615
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 65 °C/W
100
600
600