SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4559ADY-T1-GE3
• Description: MOSFET N/P-CH 60V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4559ADY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ N Channel or 3 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4559ADY-T1-GE3TR

Si4559ADY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
DS
DS
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
= - 30 V, V
= - 30 V, V
= - 60 V, V
V
= 30 V, V
V
= - 15 V, V
V
V
V
= 30 V, V
V
= 60 V, V
V
V
= 15 V, V
V
V
V
GS
DS
V
V
DS
V
GS
V
DS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
= V
= - 4.5 V, I
≤ - 5 V, V
= - 10 V, I
= - 15 V, I
= 0 V, V
= 0 V, I
= V
= - 60 V, V
= 0 V, I
= 4.5 V, I
I
I
= 60 V, V
≥ 5 V, V
= 10 V, I
= 15 V, I
D
D
I
I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 10 V, I
D
= 4.5 V, I
= 10 V, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
= 0 V, f = 1 MHz
GS
GS
= - 250 µA
= - 250 µA
D
D
D
D
= 250 µA
D
D
= 250 µA
GS
GS
= ± 20 V
= 4.3 A
= - 3.1 A
= 4.3 A
= - 3.1 A
= 3.9 A
= - 0.2 A
= 10 V
= - 10 V
= 0 V
= 0 V
J
D
D
J
D
= 55 °C
D
= 55 °C
= 4.3 A
= 4.3 A
= - 3.1 A
= - 3.1 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 60
- 25
- 1
60
20
1
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
Typ.
0.046
0.059
0.126
14.5
- 50
665
650
0.1
8.5
2.3
2.2
2.6
3.7
55
- 6
15
75
95
40
60
13
14
4
6
8
2
a
0.058
0.120
0.072
0.150
Max.
- 100
100
- 10
- 3
- 1
10
20
22
12
20
3
1
9
3
Unit
mV
µA
nC
nA
pF
V
V
A
Ω
S
Ω