SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI4559ADY-T1-GE3
• Description: MOSFET N/P-CH 60V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4559ADY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ N Channel or 3 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4559ADY-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
10
Single Pulse
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Si4559ADY
Z
thJA
100
thJA
t
t
1
2
(t)
= 90 °C/W
www.vishay.com
600
10
7