SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4559ADY-T1-GE3
• Description: MOSFET N/P-CH 60V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4559ADY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ N Channel or 3 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4559ADY-T1-GE3TR

Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.080
0.075
0.070
0.065
0.060
0.055
0.050
0.045
0.040
10
20
18
16
14
12
10
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0
0
V
GS
0.2
V
I
2
D
DS
= 10 thru 4 V
= 4.3 A
V
= 30 V
0.4
3
GS
V
4
DS
Q
Output Characteristics
= 4.5 V
g
0.6
- Drain-to-Source Voltage (V)
6
- Total Gate Charge (nC)
I
D
- Drain Current (A)
Gate Charge
0.8
6
8
1.0
10
3 V
1.2
12
9
V
1.4
14
GS
= 10 V
12
1.6
16
1.8
18
15
2.0
20
1000
800
600
400
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 4.3 A
0.5
10
= 10 V
V
V
DS
GS
Transfer Characteristics
0
T
C
J
1.0
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
20
25
Capacitance
1.5
S09-0393-Rev. B, 09-Mar-09
50
30
T
Document Number: 73624
C
2.0
C
= 125 °C
iss
25 °C
75
40
2.5
100
50
3.0
125
- 55 °C
150
3.5
60