SI6562DQ-T1-E3 Vishay, SI6562DQ-T1-E3 Datasheet

MOSFET N/P-CH 20V 8-TSSOP

SI6562DQ-T1-E3

Manufacturer Part Number
SI6562DQ-T1-E3
Description
MOSFET N/P-CH 20V 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6562DQ-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A, 3.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A @ N Channel or 3.5 A @ P Channel
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6562DQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6562DQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
32 964
Part Number:
SI6562DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 838
Part Number:
SI6562DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70720
S-81056-Rev. C, 12-May-08
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
N-Channel
P-Channel
D
G
S
S
1
1
1
1
V
DS
- 20
20
1
2
3
4
Si6562DQ-T1
Si6562DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
(V)
Si6562DQ
Top View
TSSOP-8
N- and P-Channel 2.5-V (G-S) MOSFET
J
a
0.050 at V
0.085 at V
0.030 at V
0.040 at V
= 150 °C)
a
R
DS(on)
GS
GS
a
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
= 4.5 V
= 2.5 V
5
8
7
6
a
D
S
S
G
T
T
T
T
2
2
2
2
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
± 4.5
± 3.9
± 3.5
± 2.7
D
(A)
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
thJA
I
I
DS
GS
D
S
D
stg
FEATURES
• Halogen-free Option Available
G
1
TrenchFET
N-Channel MOSFET
N-Channel
± 4.5
± 3.6
± 12
± 30
1.25
20
D
S
1
1
®
N- or P-Channel
Power MOSFETS: 2.5 V Ra
- 55 to 150
0.64
125
1.0
P-Channel
- 1.25
± 3.5
± 2.7
± 12
± 30
G
- 20
2
Vishay Siliconix
P-Channel MOSFET
Si6562DQ
www.vishay.com
ted
D
S
2
2
°C/W
RoHS*
COMPLIANT
Unit
Unit
°C
W
V
A
Available
Pb-free
1

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SI6562DQ-T1-E3 Summary of contents

Page 1

... Si6562DQ Top View Ordering Information: Si6562DQ-T1 Si6562DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6562DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70720 S-81056-Rev. C, 12-May- 2100 1800 1500 1200 Si6562DQ Vishay Siliconix 125 ° ° ° 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 900 600 C oss 300 C rss 0 0 ...

Page 4

... Si6562DQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (° Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com ° ...

Page 5

... On-Resistance vs. Drain Current 4 3 3.6 2.7 1.8 0 Total Gate Charge (nC) g Gate Charge Document Number: 70720 S-81056-Rev. C, 12-May Si6562DQ Vishay Siliconix 125 ° ° ° 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2500 C iss 2000 1500 1000 C 500 oss C rss ...

Page 6

... Si6562DQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.00 0.25 0.50 0. Source-Drain Diode Forward Voltage 0 250 µA 0.6 D 0.4 0.2 0.0 - 0.2 - 0 Temperature (° Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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