SI6562DQ-T1-E3 Vishay, SI6562DQ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI6562DQ-T1-E3
• Description: MOSFET N/P-CH 20V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6562DQ-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Source
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.5 A @ P Channel
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI6562DQ-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70720
S-81056-Rev. C, 12-May-08
0.20
0.16
0.12
0.08
0.04
4.5
3.6
2.7
1.8
0.9
30
24
18
12
0
6
0
0
0
0
0
V
I
D
DS
= 3.5 A
V
On-Resistance vs. Drain Current
GS
= 10 V
3
V
6
2
DS
Q
= 2.5 V
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
V
D
GS
- Drain Current (A)
Gate Charge
12
6
4
= 5, 4.5, 4, 3,5 V
2.5 V
18
9
6
3 V
V
GS
2 V
1.5 V
= 4.5 V
12
24
8
15
10
30
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
0
8
4
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 3.5 A
0.5
V
= 4.5 V
4
V
DS
T
GS
T
Transfer Characteristics
J
0
C
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25 °C
= 125 °C
- Gate-to-Source Voltage (V)
iss
1.0
25
Capacitance
8
C
50
1.5
oss
Vishay Siliconix
12
75
Si6562DQ
2.0
- 55 °C
www.vishay.com
100
16
2.5
125
150
20
3.0
5