SI6562DQ Vishay, SI6562DQ Datasheet

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SI6562DQ

Manufacturer Part Number
SI6562DQ
Description
N- And P-channel 2.5-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6562DQ-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI6562DQ-T1-E3
Manufacturer:
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Quantity:
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Part Number:
SI6562DQ-T1-E3
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Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
N-Channel
N-Channel
P-Channel
P-Channel
Surface Mounted on FR4 Board, t
D
G
S
S
1
1
1
1
1
2
3
4
V
Si6562DQ
DS
TSSOP-8
–20
–20
Top View
20
20
(V)
J
J
a
a
= 150 C)
= 150 C)
a
N- and P-Channel 2.5-V (G-S) MOSFET
Parameter
Parameter
a
a
10 sec.
0.050 @ V
0.085 @ V
0.030 @ V
0.040 @ V
8
7
6
5
r
D
S
S
G
a
DS(on)
2
2
2
2
GS
GS
GS
GS
( )
= –4.5 V
= –2.5 V
= 4.5 V
= 2.5 V
T
T
T
T
I
D
A
A
A
A
G
= 25 C
= 70 C
= 25 C
= 70 C
(A)
4.5
3.9
3.5
2.7
1
N-Channel MOSFET
D
Symbol
Symbol
S
1
1
T
R
J
V
V
I
P
P
DM
, T
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
N-Channel
1.25
20
4.5
3.6
12
30
N- or P-Channel
www.vishay.com FaxBack 408-970-5600
G
2
–55 to 150
P-Channel MOSFET
0.64
1.0
125
Vishay Siliconix
P-Channel
D
S
2
2
–1.25
–20
Si6562DQ
3.5
2.7
12
30
Unit
Unit
W
W
C/W
V
V
A
A
A
C
2-1

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SI6562DQ Summary of contents

Page 1

... stg Symbol R thJA Si6562DQ Vishay Siliconix P-Channel MOSFET N-Channel P-Channel Unit 20 – 4.5 3.5 3.6 2 1.25 –1.25 1 0.64 –55 to 150 P-Channel ...

Page 2

... Si6562DQ Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V GS(th) GS(th) Gate-Body Leakage Gate-Body Leakage I I GSS GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I DSS DSS a a On-State Drain Current On-State Drain Current ...

Page 3

... 2100 1800 1500 1200 900 600 300 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si6562DQ Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si6562DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... 2500 2000 1500 1000 500 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 – Si6562DQ Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 6

... Si6562DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A 0.6 D 0.4 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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