SI6562DQ Vishay, SI6562DQ Datasheet - Page 3

• Manufacturer Part Number: SI6562DQ
• Description: N- And P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 70720
S-56944—Rev. B, 23-Nov-98
0.08
0.06
0.04
0.02
4.5
3.6
2.7
1.8
0.9
30
24
18
12
6
0
0
0
0
0
0
V
I
D
V
DS
On-Resistance vs. Drain Current
= 4.5 A
GS
V
V
= 10 V
2
6
3
GS
= 2.5 V
DS
Q
Output Characteristics
= 5 thru 3 V
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
12
4
6
2.5 V
18
6
9
V
GS
= 4.5 V
24
12
8
2 V
1.5 V
10
30
15
2100
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
24
18
12
6
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
–25
V
I
rss
D
GS
0.5
= 4.5 A
V
V
= 4.5 V
4
DS
GS
T
Transfer Characteristics
J
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
1.0
www.vishay.com FaxBack 408-970-5600
oss
25 C
T
Capacitance
25
C
8
= 125 C
Vishay Siliconix
1.5
50
C
12
iss
75
Si6562DQ
2.0
–55 C
100
16
2.5
125
150
3.0
20
2-3