SI6562DQ Vishay, SI6562DQ Datasheet - Page 4

• Manufacturer Part Number: SI6562DQ
• Description: N- And P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si6562DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.0
–0.2
–0.4
–0.6
20
10
0.01
0.4
0.2
0
0.1
–50
2
1
0
10
–4
Source-Drain Diode Forward Voltage
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
T
Single Pulse
SD
J
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
I
0.4
D
J
– Temperature ( C)
= 250 A
25
10
0.6
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
J
100
= 25 C
1.0
125
10
–2
Square Wave Pulse Duration (sec)
150
1.2
10
–1
0.10
0.08
0.06
0.04
0.02
40
32
24
16
8
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
1
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
– Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
– T
Time (sec)
4
t
1
A
= P
t
2
DM
I
D
Z
thJA
= 4.5 A
1
thJA
t
t
1
2
S-56944—Rev. B, 23-Nov-98
6
(t)
Document Number: 70720
= 125 C/W
10
8
10
30
30
10