SI6562DQ Vishay, SI6562DQ Datasheet - Page 6

• Manufacturer Part Number: SI6562DQ
• Description: N- And P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si6562DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-6
0.01
–0.0
–0.2
–0.4
–0.6
0.1
0.8
0.6
0.4
0.2
30
10
2
1
10
1
–50
0.00
–4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Source-Drain Diode Forward Voltage
–25
0.25
V
SD
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
0.50
I
= 150 C
D
J
– Temperature ( C)
= 250 A
25
Single Pulse
10
0.75
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.00
T
J
= 25 C
100
1.25
125
10
–2
Square Wave Pulse Duration (sec)
1.50
150
10
–1
0.20
0.16
0.12
0.08
0.04
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
1
– Gate-to-Source Voltage (V)
0.1
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
4
– T
t
1
A
= P
t
2
DM
Z
S-56944—Rev. B, 23-Nov-98
1
6
thJA
thJA
Document Number: 70720
t
t
1
2
(t)
I
D
= 125 C/W
= 4.5 A
10
8
10
30
10
30