SI4330DY-T1-E3 Vishay, SI4330DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4330DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4330DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0165 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4330DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72184
S09-0392-Rev. D, 09-Mar-09
0.04
0.03
0.02
0.01
0.00
30
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
0.2
DS
= 8.7 A
On-Resistance vs. Drain Current
= 15 V
5
6
V
SD
0.4
Q
T
g
-
I
J
D
10
-
Source-to-Drain Voltage (V)
= 150 °C
V
- Drain Current (A)
Total Gate Charge (nC)
Gate Charge
12
GS
0.6
= 4.5 V
15
0.8
18
T
J
20
= 25 °C
1.0
V
GS
24
= 10 V
25
1.2
1.4
30
30
0.10
0.08
0.06
0.04
0.02
0.00
2400
1800
1200
1.6
1.4
1.2
1.0
0.8
0.6
600
0
-
0
50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-
GS
25
= 8.7 A
C
rss
= 10 V
2
6
V
T
V
0
J
GS
DS
-
Junction T e mperature (°C)
-
-
Gate-to-Source Voltage (V)
2 5
Capacitance
Drain-to-Source Voltage (V)
4
12
I
D
5 0
C
Vishay Siliconix
= 8.7 A
C
oss
iss
6
18
7 5
Si4330DY
www.vishay.com
100
8
24
125
150
10
30
3