SI4330DY-T1-E3 Vishay, SI4330DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4330DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4330DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0165 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4330DY-T1-E3TR

Si4330DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
-
-
-
-
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
0.01
0.1
-
50
2
1
10
-
4
-
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
Single Pulse
0
T
Threshold Voltage
J
-
25
10
Temperature (°C)
-
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
10
100
1
0.1
-
2
Limited by R
* V
Limited
I
D( on)
125
GS
Single Pulse
T
A
> minimum V
Square W ave Pulse Duration (s)
V
= 25 °C
150
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
10
1
*
-
1
GS
BVDSS Limited
at which R
I
DM
DS(on)
10
Limited
1
50
40
30
20
10
0
10
is specified
-
2
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
100
-
1
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
T
1
t
1
A
Time (s)
S09-0392-Rev. D, 09-Mar-09
= P
t
2
Document Number: 72184
DM
Z
th J A
th J A
100
10
t
t
1
2
(t )
= 85 °C/W
100
600
600