US6M11TR Rohm Semiconductor, US6M11TR Datasheet - Page 4

• Manufacturer Part Number: US6M11TR
• Description: MOSFET N/P-CH 20V 1.5A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of US6M11TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V, 12V
• Current - Continuous Drain (id) @ 25° C: 1.5A, 1.3A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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US6M11
c
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2009 ROHM Co., Ltd. All rights reserved.
0.01
0.1
10
1
5
4
3
2
1
0
0
V
Pulsed
0
GS
=0V
SOURCE-DRAIN VOLTAGE : V
Fig.13 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.10 Reverse Drain Current
0.5
0.5
vs. Sourse-Drain Voltage
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1.5
Ta=25°C
V
I
R
Pulsed
SD
D
DD
= 1.5A
G
[V]
=10Ω
= 10V
1.5
2
1000
100
600
500
400
300
200
100
10
0
0.01
0
Fig.11 Static Drain-Source On-State
Ta=25°C
f=1MHz
V
GS
=0V
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Crss
Resistance vs. Gate Source Voltage
Fig.14 Typical Capacitance
2
0.1
vs. Drain-Source Voltage
I
D
I
= 0.8A
D
4
= 1.5A
1
Ciss
6
Coss
4/7
10
GS
DS
Ta=25°C
Pulsed
8
[V]
[V]
100
10
1000
100
10
1
0.01
t
t
d
d
(on)
(off)
Fig.12 Switching Characteristics
DRAIN-CURRENT : I
0.1
t
r
t
f
1
D
[A]
Ta=25°C
V
V
R
Pulsed
DD
GS
G
=10Ω
=4.5V
= 10V
2009.07 - Rev.A
10
Data Sheet