SH8M2TB1 Rohm Semiconductor, SH8M2TB1 Datasheet - Page 3

• Manufacturer Part Number: SH8M2TB1
• Description: MOSFET N/P-CH 30V SOP8
• Manufacturer: Rohm Semiconductor

Specifications of SH8M2TB1

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 140pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 107 mOhms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SH8M2TB1TR

P-ch
Electrical characteristics (Ta=25C)
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
∗Pulsed
○
SH8M2
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Forward voltage
c
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Parameter
Parameter
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
I
DS (on)
C
C
V
GS (th)
d (on)
d (off)
Q
Q
GSS
DSS
Y
Q
t
t
oss
rss
SD
iss
fs
r
f
gs
gd
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
−1.0
Min.
Min.
−30
1.8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
100
120
490
110
5.5
1.5
2.0
65
75
10
15
35
10
−
−
−
−
−
−
Max.
Max.
−2.5
−1.2
± 10
140
165
7.7
−1
90
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
μA
μA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
3/3
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
L
= −1.6A, V
= −1mA, V
= −3.5A, V
= −1.75A, V
= −1.75A, V
= −1.75A
= −3.5A
= 8.57Ω
= 4.29Ω, R
= 10Ω
= ± 20V, V
= −30V, V
= −10V, I
= −10V, I
= −10V
= 0V
= −10V
−15V, V
−15 V
Conditions
Conditions
GS
GS
GS
D
D
G
GS
GS
GS
DS
= −1mA
= −1.75A
GS
= 10Ω
=0V
=0V
= −10V
=0V
=0V
= −4.5V
= −4V
= −5V
2009.12 - Rev.A
Data Sheet