SP8K22FU6TB Rohm Semiconductor, SP8K22FU6TB Datasheet - Page 3

• Manufacturer Part Number: SP8K22FU6TB
• Description: MOSFET N-CH DUAL 45V 4.5A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8K22FU6TB

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 45V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 9.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistor
10000
Fig.1 Typical Transfer Characteristics
1000
Electrical characteristic curves
Fig.4 Static Drain-Source On-State
0.01
100
1000
0.1
10
10
100
10
1
1
0.01
1.0
0.01
Resistance vs. Drain Current (3)
Fig.7 Typical capacitance vs.
V
pulsed
Ta=25
f=1MHz
V
DS
V
pulsed
GS
GS
=10V
=0V
=4V
1.5
Ta=125
75
25
-25
o
Source-Drain Voltage
C
Gate-Source Voltage : V
Drain-Source Voltage : V
Ta=125
0.1
Drain Current : I
o
o
o
o
0.1
-25
C
C
C
C
2.0
75
25
o
o
o
o
C
C
C
C
1
2.5
D
GS
1
[A]
[V]
3.0
DS
10
[V]
C
C
3.5
C
oss
rss
iss
10
100
10000
Fig.2 Static Drain-Source On-State
1000
1000
100
100
200
150
100
10
50
10
0
1
1
0.01
0.01
Resistance vs. Drain Current (1)
0
Fig.8 Switching Characteristics
I
D
Fig.5 Static Drain-Source
t
d(off)
=2.25A
Gate-Source Voltage : V
Ta=125
Drain Current : I
On-State Resistance vs.
Gate-Source Voltage
t
0.1
d(on)
-25
I
0.1
t
Drain Current : I
75
25
D
5
f
=4.5A
o
o
o
o
t
C
C
C
C
r
7
D
1
[A]
D
10
V
pulsed
[A]
GS
1
GS
=10V
Ta=25
pulsed
[V]
Ta=25
V
V
R
Pulsed
DD
GS
G
10
=10Ω
o
=10V
=25V
C
o
C
15
10
1000
10
100
0.01
Fig.3 Static Drain-Source On-State
8
6
4
2
0
10
Fig.9 Dynamic Input Characteristics
0.1
1
10
0.01
1
0
V
pulsed
0
Ta=25
V
I
R
Pulsed
GS
Resistance vs. Drain Current (2)
D
Fig.6 Source-Current vs.
DD
=4.5A
G
V
pulsed
=4.5V
=10Ω
GS
Ta=125
=25V
2
=0V
o
C
Total Gate Charge : Qg [nC]
-25
Ta=125
Source-Drain Voltage : V
75
25
Source-Drain Voltage
Drain Current : I
o
o
o
o
4
0.1
C
C
C
C
-25
75
25
0.5
Rev.B
o
o
o
o
C
C
C
C
6
SP8K22
8
D
1
[A]
1
SD
10
[V]
12
10
3/4
1.5