SH8M70TB1 Rohm Semiconductor, SH8M70TB1 Datasheet - Page 6

• Manufacturer Part Number: SH8M70TB1
• Description: MOSFET N/P-CH 250V SOP8
• Manufacturer: Rohm Semiconductor

Specifications of SH8M70TB1

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A, 2.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 0.75 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SH8M70TB1TR

○
SH8M70
c
www.rohm.com
1000
Fig.10 Reverse Recovery Time vs.
2010 ROHM Co., Ltd. All rights reserved.
100
Fig.7 Static Drain-Source On-State
0.1
10
10
1
1
0.1
0.1
Resistance vs. Drain Current
V
Pulsed
GS
Reverse Drain Current
Reverse Drain Current : -I
=10V
Drain Current : -I
1
1
D
DR
(A)
Ta=125°C
(A)
-25°C
75°C
25°C
10
10
0.01
Fig.8 Forward Transfer Admittance
5
4
3
2
1
0
0.1
-50 -25
10
Fig.11 Static Drain-Source On-State
1
0.01
V
Pulsed
GS
V
Pulsed
DS
=10V
Resistance vs.Channel Temperature
=10V
vs. Drain Current
0
Temperature : Tch (°C)
Drain Current : -I
25
0.1
6/7
50
I
D
=2.5A
Ta=-25°C
75 100 125 150
125°C
25°C
75°C
1.25A
D
1
(A)
10
(X-1)
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
5
4
3
2
1
0
2
1
0
-50 -25
0
Fig.12 Typical Output Characteristics
Fig.9 Gate Threshold Voltage
vs. Channel Temperature
Channel Temperature : Tch: (°C)
Drain-Sourse Voltage : -V
V
GS
=-10V
2
0
-9V
-8V
2010.06 - Rev.B
25
4
50
Data Sheet
-7V
6
75 100 125 150
T
Single Pulsed
-6V
C
=25°C
-5V
DS
V
I
(V)
8
D
DS
=1mA
(X-1)
=10V
-4V
10