IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 10

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IRF8313PBF

Manufacturer Part Number
IRF8313PBF
Description
MOSFET N-CH DUAL 30V 9.7A 8-SOIC
Manufacturer
International Rectifier
Datasheet

Specifications of IRF8313PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15.5 mOhm @ 9.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
760pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
21.6 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.7 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10
Orderable Part number
IRF8313PbF
IRF8313TRPbF
Qualification Information
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Applicable version of JEDEC standard at the time of product release.
Package Type
SO-8
SO-8
Visit us at www.irf.com for sales contact information.11/08
Data and specifications subject to change without notice.
Form
Tube/Bulk
Tape and Reel
SO-8
(per JEDEC JESD47F
Standard Pack
(per JEDEC J-STD-020D
Consumer
Quantity
Yes
4000
95
TAC Fax: (310) 252-7903
†††
††
MSL1
guidelines)
Note
www.irf.com
†††
)

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